Course Code: ENG325

Synopsis

This course covers the principles of operation of various semiconductor electronic and photonic devices, and their fabrication and applications. Topics include the fundamental physical principles of semiconductor/metal contacts/junctions, the use of mathematical models to describe the physical behaviour of BJTs, MOSFETs and junction FETs, and the operation and construction of optoelectronic devices (LEDs and solar cells).
Level: 5
Credit Units: 5
Presentation Pattern: EVERY JAN

Topics

  • P-N junction in equilibrium, P-N junction under forward bias
  • P-N junction under reverse bias, Capacitance in P-N junctions
  • Reverse breakdown in P-N junctions, Metal-semiconductor contacts
  • Light emitting diodes & photovoltaic devices
  • Bipolar junction devices
  • Junction field effect transistors [JFET] & metal-oxide-semiconductor FET [MOSFET]

Learning Outcome

  • Discuss the fundamentals of semiconductor devices such as pn junction, bipolar junction transistors, field effect transistors, light emitting diodes and photovoltaic devices.
  • Illustrate the breakdown mechanism in pn junctions and the characteristics of the different metal semiconductor contacts.
  • Apply suitable mathematical model to study the performance of semiconductor devices.
  • Appraise the circuit parameters for the transistor’s different operational modes.
  • Assess the impact of change in bias voltage, temperature, size and other parameters on the functioning of semiconductor devices.
  • Calculate bias voltage, mole fraction, size, current flow, voltage, resistance and other parameters associated with semiconductor devices.